METHOD FOR MANUFACTURING SILICON NITRIDE FILM, SILICON OXYNITRIDE FILM, OR SILICON OXIDE FILM BY CVD METHOD

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon nitride film, a silicon oxynitride film, or a silicon oxide film, of little hydrogen and carbon content, without generating ammonium chloride, even at a low temperature by a CVD method. SOLUTION: This manufacturing method is chara...

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Hauptverfasser:	DUSSARAT CHRISTIAN, JEAN-MARC GILLARD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon nitride film, a silicon oxynitride film, or a silicon oxide film, of little hydrogen and carbon content, without generating ammonium chloride, even at a low temperature by a CVD method. SOLUTION: This manufacturing method is characterized by using at least one compound selected from the group consisting of tetrakis(hydrocarbylamino) silane indicated by the formula: Si(NHRi)4and tris(hydrocarbylamino)silane indicated in the formula: SiH(NHRi)3, (wherein each Riis a 1-4C hydrocarbon group) for a precursor of the silicon nitride film, the silicon oxynitride film, or the silicon oxide film. COPYRIGHT: (C)2003,JPO