ENERGY DISPERSION TYPE SEMICONDUCTOR X-RAY DETECTOR

PROBLEM TO BE SOLVED: To provide an energy dispersion type semiconductor X-ray detector that can detect a desired characterized X-ray with accuracy, by avoiding the bad influence of a system peak generated when an electron beam projected to a sample collides with a lower pole piece positioned below...

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Bibliographische Detailangaben
Hauptverfasser: ISHIKAWA SUMIYO, ARAI SHIGETOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an energy dispersion type semiconductor X-ray detector that can detect a desired characterized X-ray with accuracy, by avoiding the bad influence of a system peak generated when an electron beam projected to a sample collides with a lower pole piece positioned below the sample after passing through the sample when the sample has a thin film-like shape. SOLUTION: In this semiconductor X-ray detector 8 constituted to detect the characteristic X-ray 9 generated in the sample 5 positioned between an upper pole piece 6 and the lower pole piece 7 when the electron beam 3 emitted from an electron beam source 1 is projected upon the sample 5 from the upside of the sample 5, a collimator 12 provided with a system peak incidence blocking section 16 which blocks the incidence of the system peak 15 generated when the electron beam 3 collides with the lower pole piece 7 is provided in front of an X-ray transmitting window 11. COPYRIGHT: (C)2003,JPO