METHOD FOR FORMING THIN FILM BY CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a method for forming a thin film by chemical vapor deposition, which prevents erosion of a substrate, restrains leakage of an electric current, and improves flatness of the film surface. SOLUTION: The method for forming the thin film by chemical vapor deposition intr...

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Bibliographische Detailangaben
1. Verfasser:	IZUMI HIROHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a thin film by chemical vapor deposition, which prevents erosion of a substrate, restrains leakage of an electric current, and improves flatness of the film surface. SOLUTION: The method for forming the thin film by chemical vapor deposition introduces alternately a raw gas and a gas activated by an activating means, onto the substrate and conducting the chemical vapor deposition on it, in a process for forming the thin film on the substrate by chemical vapor deposition, and forming the thin film having the required film thickness on the above substrate through repeating the chemical vapor deposition. COPYRIGHT: (C)2003,JPO