SEMICONDUCTOR DEVICE, FORMING METHOD FOR PATTERN FOR THE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR THE SEMICONDUCTOR, AND PATTERN FORMING DEVICE FOR THE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To realize stable operation of a circuit by effectively absorbing noises. SOLUTION: A semiconductor device has a bypass capacitor in MOS structure which is formed extending from a power wire area to below a free area where no other function layer is present adjacently to the po...

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Bibliographische Detailangaben
Hauptverfasser:	HONMA JUNKO, BENNO HIROSHI, SHIMAZAKI KENJI, ITO MITSUSANE, TSUJIKAWA HIROYUKI, SAWADA MASATOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To realize stable operation of a circuit by effectively absorbing noises. SOLUTION: A semiconductor device has a bypass capacitor in MOS structure which is formed extending from a power wire area to below a free area where no other function layer is present adjacently to the power wire area and has a gate electrode formed on a diffusion area of one conductivity across a capacitor insulating film and a substrate contact which is formed below a ground wire area and fixes a substrate potential and is characterized in that the bypass capacitor has a contact contacting the power wire on the gate electrode surface and the diffusion area of one conductivity and a diffusion area of the substrate contact are connected.