MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY UNIT EQUIPPED WITH THE SAME

PROBLEM TO BE SOLVED: To solve the problem that since gate wires are formed separately, one by one, by a conventional manufacturing method for a thin-film transistor array substrate, static electricity enters a gate wire in subsequent processes and thin-film transistor characteristics deteriorate to...

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Hauptverfasser:	TAMURA TATSUHIKO, IMAI ATSUSHI, IWASAKI KATSUO, MANSEI ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To solve the problem that since gate wires are formed separately, one by one, by a conventional manufacturing method for a thin-film transistor array substrate, static electricity enters a gate wire in subsequent processes and thin-film transistor characteristics deteriorate to cause a decrease in yield. SOLUTION: A plurality of gate wires, a gate wire connection part which connects the plurality of gate wires, and a gate electrode are provided on an insulating substrate and a 1st insulating film is provided thereupon; and a 2nd insulating film is provided on the gate wire connection part, a source electrode, a drain electrode, and a channel formation area, and a contact hole is provided on the gate wire and drain electrode. At this time, the 1st insulating film and 2nd insulating film on the gate wire connection part are etched away and the exposed gate wire connection part is etched away to part the connected gate wires.