SPIN VALVE TYPE MAGNETORESISTIVE EFFECT SENSOR ELEMENT AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a method for manufacturing an SVMR sensor element in which the total thickness of the element is reduced and a shield gap is narrowed. SOLUTION: Two ferromagnetic layers 12 and 14 are laminated with a very thin spacer layer 16 (of ruthenium, with a thickness of about 0.3 mm) in between. The two ferromagnetic layers 12 and 14 are exchange-coupled each other strongly through the very thin spacer layer 16 to constitute an SyAP layer 18. Since, related to a top type SVMR sensor element comprising the SyAP layer 18, the coupling magnetic field for exchange-coupling between two ferromagnetic layers 12 and 14 is less required, a thinner antiferromagnetic pinning layer 20 utilized for exchange-coupling the two ferromagnetic layers 12 and 14 can be employed. Thus, the total thickness of the element is reduced, and the gap (shield gap) between the two magnetic shields sandwiching the top type SVMR sensor element is narrowed.