METHOD AND DEVICE FOR FORMING NITRIDE FILM
PROBLEM TO BE SOLVED: To provide a method and a device for forming a nitride film with which uniformity of film thickness can be improved, excellent film formation control can be obtained and a thermal effect on a substrate can be significantly reduced while significantly increasing a film formation...
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| creator | ASECHI MASARU NISHISATO HIROSHI MAEDA YUJI |
| description | PROBLEM TO BE SOLVED: To provide a method and a device for forming a nitride film with which uniformity of film thickness can be improved, excellent film formation control can be obtained and a thermal effect on a substrate can be significantly reduced while significantly increasing a film formation speed when a nitride film is formed on a substrate by a CVD method. SOLUTION: This method of forming a nitride film is a thermal CVD method in which a silicon nitride film is formed on a silicon wafer W. First, the silicon wafer W is placed on a susceptor 5 in a chamber 2 with predetermined pressure therein. Then, an ammonia gas and a disilane gas are supplied from a gas supply unit 30 into the chamber 2 at a predetermined flow rate, changing the pressure in the chamber 2 to 10-70 kPa. The silicon wafer W is heated by a heater 51 to form the silicon nitride film on the silicon wafer W. |
| format | Patent |
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SOLUTION: This method of forming a nitride film is a thermal CVD method in which a silicon nitride film is formed on a silicon wafer W. First, the silicon wafer W is placed on a susceptor 5 in a chamber 2 with predetermined pressure therein. Then, an ammonia gas and a disilane gas are supplied from a gas supply unit 30 into the chamber 2 at a predetermined flow rate, changing the pressure in the chamber 2 to 10-70 kPa. 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SOLUTION: This method of forming a nitride film is a thermal CVD method in which a silicon nitride film is formed on a silicon wafer W. First, the silicon wafer W is placed on a susceptor 5 in a chamber 2 with predetermined pressure therein. Then, an ammonia gas and a disilane gas are supplied from a gas supply unit 30 into the chamber 2 at a predetermined flow rate, changing the pressure in the chamber 2 to 10-70 kPa. 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SOLUTION: This method of forming a nitride film is a thermal CVD method in which a silicon nitride film is formed on a silicon wafer W. First, the silicon wafer W is placed on a susceptor 5 in a chamber 2 with predetermined pressure therein. Then, an ammonia gas and a disilane gas are supplied from a gas supply unit 30 into the chamber 2 at a predetermined flow rate, changing the pressure in the chamber 2 to 10-70 kPa. The silicon wafer W is heated by a heater 51 to form the silicon nitride film on the silicon wafer W.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD AND DEVICE FOR FORMING NITRIDE FILM |
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