METHOD AND DEVICE FOR FORMING NITRIDE FILM

PROBLEM TO BE SOLVED: To provide a method and a device for forming a nitride film with which uniformity of film thickness can be improved, excellent film formation control can be obtained and a thermal effect on a substrate can be significantly reduced while significantly increasing a film formation speed when a nitride film is formed on a substrate by a CVD method. SOLUTION: This method of forming a nitride film is a thermal CVD method in which a silicon nitride film is formed on a silicon wafer W. First, the silicon wafer W is placed on a susceptor 5 in a chamber 2 with predetermined pressure therein. Then, an ammonia gas and a disilane gas are supplied from a gas supply unit 30 into the chamber 2 at a predetermined flow rate, changing the pressure in the chamber 2 to 10-70 kPa. The silicon wafer W is heated by a heater 51 to form the silicon nitride film on the silicon wafer W.