PRECURSOR FOR HEAPING ZIRCONIUM OXIDE THIN FILM AND HAFNIUM OXIDE THIN FILM

PROBLEM TO BE SOLVED: To provide a hafnium precursor able to be used for heaping a hafnium metal oxide thin film by CVD or ALCVD (atomic layer chemical vapor deposition). SOLUTION: A method for producing the precursor for a thin film formed by a chemical vapor deposition method is comprised of a ste...

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Hauptverfasser:	ZHUANG WEI-WEI, EVANS DAVID RUSSELL
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a hafnium precursor able to be used for heaping a hafnium metal oxide thin film by CVD or ALCVD (atomic layer chemical vapor deposition). SOLUTION: A method for producing the precursor for a thin film formed by a chemical vapor deposition method is comprised of a step to form a solution by mixing ZCl4 (Z is an element selected from the group consisting of hafnium and zirconium) with H(tmhd)3 solvent and a hydrocarbon solvent such as benzene and the like, a step to reflux the solvent during 12 hours in argon atmosphere, a step to generate a solid compound by removing the solvent in vacuum and a step to sublime the compound in vacuum of about 0.1 mmHg at 200 deg.C.