METHOD OF FORMING SILICON OXIDE FILM OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING WIRING EQUIPPED WITH SILICON OXIDE FILM

PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor device which is capable of insulating fine conductive patterns from one another without producing any defective in a process. SOLUTION: An antioxidant film 36 which is capable of continuously preventing an oxidizing agent from permeating is formed on a conductor pattern 32 and a semiconductor substrate 30. The antioxidant film 36 is coated with a fluid oxide for the formation of a fluid oxide film so as to bury the conductor pattern 32. The fluid oxide film is thermally treated into a silicon oxide film 40. In succession, the silicon oxide film filling up a gap between the antioxidant film 36 and the conductor pattern 32 and the antioxidant film 36 disclosed on the semiconductor substrate 30 are etched so as to form a contact hole 42, so that the wiring of a semiconductor device can be formed.