METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element appropriate for an ultrahigh integrated semiconductor element, which enables the formation of an excellent contact plug. SOLUTION: The method comprises a step for forming an insulating film 29 on a silicon substrate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: TEI YUSEKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element appropriate for an ultrahigh integrated semiconductor element, which enables the formation of an excellent contact plug. SOLUTION: The method comprises a step for forming an insulating film 29 on a silicon substrate 21, a step for forming a contact hole 34 in the insulating film 29, a step for forming an inorganic layer 31 on the side surface of the contact hole 34, and a step for forming a selectively conductive plug 35 in the contact hole 34 including the surface of the inorganic layer 31.