PROCESSING METHOD FOR SEMICONDUCTOR CHIP
PROBLEM TO BE SOLVED: To provide a processing method for semiconductor chips wherewith excellent contact plugs suitable for ultra high-density semiconductor chips are formed. SOLUTION: The processing method involves a stage in which an insulating film 29 is formed on a silicon substrate 21; a stage...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a processing method for semiconductor chips wherewith excellent contact plugs suitable for ultra high-density semiconductor chips are formed. SOLUTION: The processing method involves a stage in which an insulating film 29 is formed on a silicon substrate 21; a stage in which contact holes 30 are formed in the insulating film; a stage in which a silicon film 33 is formed on the surfaces of the contact holes; and a stage in which selective conductive plugs 35 are formed in the contact holes with the silicon film formed. |
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