FAULT TOLERANT MAGNETORESISTIVE SOLID-STATE STORAGE DEVICE
PROBLEM TO BE SOLVED: To provide a fault tolerant magnetoresistive solid-state storage device having tolerance for at least some faults. SOLUTION: A magnetoresistive solid-state storage device (MRAM) performs error correcting coding (ECC) of stored information. At manufacture or during use, each log...
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| creator | MCCARTHY DOMINIC P PATERSON KENNETH GRAHAM WYATT STEWART R JEDWAB JONATHAN KENNETH K SMITH DAVIS JAMES A PERNER FREDERICK A STEFAN MORLEY ELDREDGE KENNETH I |
| description | PROBLEM TO BE SOLVED: To provide a fault tolerant magnetoresistive solid-state storage device having tolerance for at least some faults. SOLUTION: A magnetoresistive solid-state storage device (MRAM) performs error correcting coding (ECC) of stored information. At manufacture or during use, each logical block ECC encoded data and/or the corresponding set of storage cells are evaluated to determine suitability for continued use, or whether remedial action is necessary. In a first preferred method ECC decoding is attempted to determine whether information is unrecoverable from the block of ECC encoded data. In a second preferred method a parametric evaluation is made prior to attempting ECC decoding. |
| format | Patent |
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| subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
| title | FAULT TOLERANT MAGNETORESISTIVE SOLID-STATE STORAGE DEVICE |
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