FAULT TOLERANT MAGNETORESISTIVE SOLID-STATE STORAGE DEVICE

PROBLEM TO BE SOLVED: To provide a fault tolerant magnetoresistive solid-state storage device having tolerance for at least some faults. SOLUTION: A magnetoresistive solid-state storage device (MRAM) performs error correcting coding (ECC) of stored information. At manufacture or during use, each log...

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Hauptverfasser: MCCARTHY DOMINIC P, PATERSON KENNETH GRAHAM, WYATT STEWART R, JEDWAB JONATHAN, KENNETH K SMITH, DAVIS JAMES A, PERNER FREDERICK A, STEFAN MORLEY, ELDREDGE KENNETH I
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a fault tolerant magnetoresistive solid-state storage device having tolerance for at least some faults. SOLUTION: A magnetoresistive solid-state storage device (MRAM) performs error correcting coding (ECC) of stored information. At manufacture or during use, each logical block ECC encoded data and/or the corresponding set of storage cells are evaluated to determine suitability for continued use, or whether remedial action is necessary. In a first preferred method ECC decoding is attempted to determine whether information is unrecoverable from the block of ECC encoded data. In a second preferred method a parametric evaluation is made prior to attempting ECC decoding.