LIQUID CRYSTAL DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide a liquid crystal display device whose yield and secure durability are improved by preventing the damage of elements caused by static electricity which is to be generated during manufacturing processes. SOLUTION: This liquid crystal display device includes a periphera...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUNAMI MASAHITO, NAKAMURA AKIKO
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a liquid crystal display device whose yield and secure durability are improved by preventing the damage of elements caused by static electricity which is to be generated during manufacturing processes. SOLUTION: This liquid crystal display device includes a peripheral driving circuit including a thin film transistor 10 formed on an insulation substrate, external input terminals 12a which are used for connection with an external circuit and bus wirings 9a2, 9b2 connecting the external input terminals 12a, 12b and the thin film transistor 10 constituting the peripheral driving circuit, each of the bus wirings 92a, 92b is joined by different wiring materials of at least two kinds with contact holes 21a, 21b of one or more or is joined with at least a circuit element. For example, a Ti film whose thickness is 100 nm and an Al film whose thickness is 700 nm are used as the different wiring materials of at least two kinds.