LIGHT-EMITTING DEVICE ARRAY
PROBLEM TO BE SOLVED: To solve the problem that the width of an element isolation region for forming a semiconductor block becomes narrow when the density of the light-emitting device of the light-emitting device array for achieving matrix drive is to be increased, the probability for receiving the...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To solve the problem that the width of an element isolation region for forming a semiconductor block becomes narrow when the density of the light-emitting device of the light-emitting device array for achieving matrix drive is to be increased, the probability for receiving the influence of particles becomes high since the formation distance of the element isolation region itself is long, and improved element isolation region cannot be obtained for decreasing yields in manufacture. SOLUTION: An n-side electrode 5 is closely arranged to a plurality of LEDs 10 (four LEDs in Figure 1), and an element isolation region 15 is formed so that the four LEDs 10 and the n-side electrode 5 are surrounded to form an n-type semiconductor block 11. Further, the region width at a section, that is formed in the arrangement direction of the LED 10, is formed wider than the region width in the section among the LEDs 10 of the element isolation region 15. |
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