ALUMINIUM HARD MASK FOR DIELECTRIC ETCHING

ALUMINIUM HARD MASK FOR DIELECTRIC ETCHING

PROBLEM TO BE SOLVED: To solve a problem arising in the fabrication of vias and trenches in a semiconductor device which have a high aspect ratio, and a problem that etching of these structures having the high aspect ratio is generally difficult due to erosion of a mask pattern during etching. SOLUT...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BRENNAN KENNETH D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To solve a problem arising in the fabrication of vias and trenches in a semiconductor device which have a high aspect ratio, and a problem that etching of these structures having the high aspect ratio is generally difficult due to erosion of a mask pattern during etching. SOLUTION: The problem is solved by use of an aluminium hard mask for etching of a dielectric layer.