CONTACTLESS LOCAL INTERCONNECT PROCESS UTILIZING SELF- ALIGNED SILICIDE

PROBLEM TO BE SOLVED: To provide a contactless local interconnect structure and a method for forming it. SOLUTION: The contactless self-aligned local interconnect structure provides a continuous silicide film which electrically couples an upper silicon structure with a lower silicon structure. The upper silicon structure overlaps with the lower silicon structure and is insulated from the lower silicon structure by an insulating layer formed between the structures. A continuous silicide film 36 electrically couples the two structures 4 and 2 by bridging a gap 38 formed of the insulating layer in the overlap area. The manufacturing method forms a lateral edge of the upper silicon structure 4 extending onto the lower silicon structure, 2 forms a blanket metal film, forms the continuous silicide film by heating the metal film, bridging the gap formed of the insulating layer by making exposed silicon of the upper silicon structure and exposed silicon of the lower silicon structure react to each other, and removing a non-reaction part of the metal film after the silicide film is formed.