DUMMY WAFER, MANUFACTURING METHOD THEREFOR AND DETECTION METHOD USING THE SAME

DUMMY WAFER, MANUFACTURING METHOD THEREFOR AND DETECTION METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a dummy wafer, which is required to be highly resistant to a corrosive gas or plasma thereof in semiconductor manufacturing steps and is superior in plasma resistance, heat resistance and shock resistance, and has light-shielding performance. SOLUTION: A ceramic dumm...

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Bibliographische Detailangaben
1. Verfasser: MATSUNAGA FUMIO
Format: Patent
Sprache:eng
Schlagworte:
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SEMICONDUCTOR DEVICES
SLAG
TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a dummy wafer, which is required to be highly resistant to a corrosive gas or plasma thereof in semiconductor manufacturing steps and is superior in plasma resistance, heat resistance and shock resistance, and has light-shielding performance. SOLUTION: A ceramic dummy wafer, used in semiconductor manufacturing steps, consists of a compound of yttria and aluminum as a main crystal phase. The phase consists of YAG (yittium, aluminum and garnet), the YAG and aluminum or the YAG and yttria.