CRYSTAL GROWTH METHOD OF COMPOUND SEMICONDUCTOR AND OPTICAL SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a crystal growth method of a compound semiconductor that grow highly-doped n- and p-type Zn1-x Mgx Sey Te1-y four-element mixed crystals and can easily form the element of a ZnTe-based substance, and to provide an optical semiconductor device. SOLUTION: Molecular beam epitaxy is used on a substrate as a crystal growth method, Al and N are used as impurities, and optimization is made under the growth conditions, thus forming p- and n-type conductive layers for growing highly-doped Zn1-x Mgx Sey Te1-y .