METHOD OF FORMING INSULATING FILM AND FORMING SYSTEM

PROBLEM TO BE SOLVED: To provide a method of forming an insulating film having high reliability and a forming system. SOLUTION: A gate insulating film 104 of a MISFET 100 consists of a silicon oxide film 106, a silicon nitride film 107, and a high dielectric constant film 108. The silicon oxide film...

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Bibliographische Detailangaben
Hauptverfasser:	MURAKAWA EMI, NAKANISHI TOSHIO, KUMAI TOSHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method of forming an insulating film having high reliability and a forming system. SOLUTION: A gate insulating film 104 of a MISFET 100 consists of a silicon oxide film 106, a silicon nitride film 107, and a high dielectric constant film 108. The silicon oxide film 106 and the silicon nitride film 107 are formed by microwave plasma processing using a radial line slot antenna.