PLASMA CVD SYSTEM

PROBLEM TO BE SOLVED: To uniformly cool a top plate of a CVD system. SOLUTION: A cooling medium channel (21) is formed inside the top plate put on a vessel (10). An entrance (22) of the cooling medium channel is connected to a cooling medium pump (74) via a first cooling medium pipe (71), while an e...

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Bibliographische Detailangaben
Hauptverfasser:	MURAKAWA SHINICHI, YANAGIDA HISASHI, IRIE TAKAYUKI, INOUE MASAHIKO, SHIMAZU TADASHI, YOSHIDA KAZUTO, OGATA JUNJI, OSAKI TORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To uniformly cool a top plate of a CVD system. SOLUTION: A cooling medium channel (21) is formed inside the top plate put on a vessel (10). An entrance (22) of the cooling medium channel is connected to a cooling medium pump (74) via a first cooling medium pipe (71), while an exit (23) of the cooling medium channel (21) is connected to a heat exchange (70) via a second cooling medium channel (72). The cooling medium pump (74) and the heat exchange (70) are connected by a third cooling medium pipe (73). A cooling medium absorbs heat from the top plate, when passing through the inside of the top plate and releases the heat absorbed in the heat exchange.