PHOTOELECTRIC CONVERSION DEVICE BOARD

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device board which is capable of more improving a photoelectric conversion layer in light-confinement effect. SOLUTION: A first base film 1 whose main component is tin oxide, a second base film 2, and a conductive film are successively form...

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Bibliographische Detailangaben
Hauptverfasser:	FUJISAWA AKIRA, SUEYOSHI YUKIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a photoelectric conversion device board which is capable of more improving a photoelectric conversion layer in light-confinement effect. SOLUTION: A first base film 1 whose main component is tin oxide, a second base film 2, and a conductive film are successively formed in this sequence on a glass board 5 containing alkaline components. Recesses 7 are formed on the surface of the second base film 2 as reflecting a hole 6 and a dent 9 formed on the first base film 1. The recesses 7 are limited to an area ratio of 0.2 to 0.50:1 and 200 to 600 nm in average diameter. The first base film is formed on the glass board 5 kept at a temperature of 600 deg.C or higher through a CVD method, by the use of a film forming gas containing a chlorine-containing metal compound and a halogen-containing gas such as chlorine gas, hydrogen chloride gas that does not contain the above metal. Halogen-containing gas is added to accelerate generation of holes in the first base film.