SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device having a barrier insulation film which covers an interconnection mainly formed of a copper film and has a small leakage current and has a sufficiently high capability to prevent the diffusion of copper and a low relative permittivity. SOLUTION:...

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Hauptverfasser:	SHIOTANI YOSHIMI, NISHIMOTO HIROKO, IKAKURA HIROSHI, SUZUKI TOMOMI, MAEDA KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device having a barrier insulation film which covers an interconnection mainly formed of a copper film and has a small leakage current and has a sufficiently high capability to prevent the diffusion of copper and a low relative permittivity. SOLUTION: The barrier insulation film 34a has a multiplayer structure of two or more layers which comprises a first barrier insulation film 34aa which contains silicon, oxygen, nitrogen, and hydrogen or silicon, oxygen, nitrogen, hydrogen, and carbon, and a second barrier insulation film 34ab which contains silicon, oxygen, and hydrogen or silicon, oxygen, hydrogen, and carbon.