COMPOSITION FOR FORMING GAP FILLING MATERIAL FOR LITHOGRAPHY

PROBLEM TO BE SOLVED: To provide a gap filling material for lithography excellent in property of flattening a substrate with protrusions and recessions such as holes and trenches, causing no intermixing with a resist layer and having dry etching speed larger compared with that of the resist. SOLUTIO...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SONE YASUHISA, TAKEI SATOSHI, MIZUSAWA KENICHI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES APPARATUS SPECIALLY ADAPTED THEREFOR CHEMICAL PAINT OR INK REMOVERS CHEMISTRY CINEMATOGRAPHY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS CORRECTING FLUIDS DYES ELECTROGRAPHY FILLING PASTES HOLOGRAPHY INKS MATERIALS THEREFOR METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS THEREFOR WOODSTAINS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a gap filling material for lithography excellent in property of flattening a substrate with protrusions and recessions such as holes and trenches, causing no intermixing with a resist layer and having dry etching speed larger compared with that of the resist. SOLUTION: A composition for forming the gap filling material containing a polymer solution is used in manufacturing a semiconductor device by a method which consists of coating the substrate having holes with >=1 aspect ratio defined by height/diameter with a resist and transferring an image to the substrate utilizing a lithography process and is used to flatten the substrate surface by coating the substrate therewith before coating it with the resist.