LIQUID PHASE GROWTH METHOD, LIQUID PHASE GROWTH DEVICE AND SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To uniformly grow a material to be grown on substrates 101 in a high speed regardless of the number of sheets of the substrates 101. SOLUTION: A vessel 105 filled with molten metal 104 containing the material to be grown, dipping means 103, 113 for dipping the substrates 101 in...
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| creator | SAITO TETSUO UKIYO NORITAKA SHOJI TATSUMI NISHIDA AKIYUKI IWAGAMI MAKOTO YOSHINO TOSHIHITO NAKAGAWA KATSUMI MIZUTANI MASAKI |
| description | PROBLEM TO BE SOLVED: To uniformly grow a material to be grown on substrates 101 in a high speed regardless of the number of sheets of the substrates 101. SOLUTION: A vessel 105 filled with molten metal 104 containing the material to be grown, dipping means 103, 113 for dipping the substrates 101 into the molten metal 104, a magnet 109 arranged at the periphery of the vessel 105, and a moving means for relatively moving the magnet 109 and the vessel 105 are provided. |
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SOLUTION: A vessel 105 filled with molten metal 104 containing the material to be grown, dipping means 103, 113 for dipping the substrates 101 into the molten metal 104, a magnet 109 arranged at the periphery of the vessel 105, and a moving means for relatively moving the magnet 109 and the vessel 105 are provided.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | LIQUID PHASE GROWTH METHOD, LIQUID PHASE GROWTH DEVICE AND SEMICONDUCTOR DEVICE |
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