LIQUID PHASE GROWTH METHOD, LIQUID PHASE GROWTH DEVICE AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To uniformly grow a material to be grown on substrates 101 in a high speed regardless of the number of sheets of the substrates 101. SOLUTION: A vessel 105 filled with molten metal 104 containing the material to be grown, dipping means 103, 113 for dipping the substrates 101 in...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SAITO TETSUO, UKIYO NORITAKA, SHOJI TATSUMI, NISHIDA AKIYUKI, IWAGAMI MAKOTO, YOSHINO TOSHIHITO, NAKAGAWA KATSUMI, MIZUTANI MASAKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To uniformly grow a material to be grown on substrates 101 in a high speed regardless of the number of sheets of the substrates 101. SOLUTION: A vessel 105 filled with molten metal 104 containing the material to be grown, dipping means 103, 113 for dipping the substrates 101 into the molten metal 104, a magnet 109 arranged at the periphery of the vessel 105, and a moving means for relatively moving the magnet 109 and the vessel 105 are provided.