METHOD AND DEVICE FOR MEASURING INTERFACE POSITION AT CRYSTAL GROWTH

PROBLEM TO BE SOLVED: To provide a method and a device for measuring an interface position at crystal growth in order to measure a crystal growth rate as a requirement of the crystal growth process control. SOLUTION: This is a method for measuring the interface position between a fused material and...

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Bibliographische Detailangaben
Hauptverfasser:	PARTHIER LUTZ, WEHRHAN GUNTHER, SPEIT BURKHARD, LENTES FRANK-THOMAS, AXMANN HANS-JOERG
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method and a device for measuring an interface position at crystal growth in order to measure a crystal growth rate as a requirement of the crystal growth process control. SOLUTION: This is a method for measuring the interface position between a fused material and a crystal growing from the fused material, which has a process a) passing an incident light signal to the interface between the fused material and the crystal and a process b) measuring a reflected light signal generated on the interface by the incident light signal for the purpose of the interface position measurement.