METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which can form a barrier insulating film, having sufficient performance for preventing the diffusion of copper and can form a main insulating film having a sufficiently low dielectric constant, while improving the t...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SHIOTANI YOSHIMI, NISHIMOTO HIROKO, IKAKURA HIROSHI, SUZUKI TOMOMI, MAEDA KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which can form a barrier insulating film, having sufficient performance for preventing the diffusion of copper and can form a main insulating film having a sufficiently low dielectric constant, while improving the throughput, when the barrier insulating film and the main insulation film on it are sequentially formed on wiring which is mainly constituted of a copper film. SOLUTION: The method has a process for applying electric power, having a first frequency f1 to first film-forming gas containing at least silicon-containing gas silicon and gas containing oxygen, making first film-forming gas into plasma, making them to react each other and forming the barrier insulating film 35a on a substrate 21, where the film is formed and a process for applying a second frequency f2 which is higher than the first frequency f1 to second film-forming gas containing at least gas containing silicon and a gas oxygen- containing, making second film-forming gas into a plasma, making them react with each other and forming the main insulation film 35a having a low dielectric constant on the barrier insulating film 35a.