COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a compound semiconductor light emitting element that is provided with a compound semiconductor layer on the surface side of an insulating substrate and a bonding electrode on the rear side of the substrate and can be improved in productivity, and to provide a method of manufacturing the element. SOLUTION: At the edge of this compound semiconductor light emitting element, a notched groove is formed from the surface to the side face of the element, and a surface-side conductive film 41 is formed from an n-type layer 21 which is in contact with the groove on the inside of the groove to the groove. In addition, a rear-side conductive film 42 is formed from the rear side to the side face of the substrate 1 and connected to the surface-side conductive film 41. The surface-side conductive film 41 constitutes an ohmic electrode for the n-type layer 21 and the rear-side conductive film 42 constitutes the bonding electrode on the rear side of the substrate 1. The surface-side conductive film 41 is formed by forming the notched groove by half-cutting a wafer, and the rear-side conductive film 42 is formed by collectively sticking a plurality of separated chips to an adhesive sheet.