SEMICONDUCTOR INTEGRATED CIRCUIT

PROBLEM TO BE SOLVED: To overcome the problem that a rise in temperature of diffusion 49 in an emitter unit where the largest amount of current flows may cause a secondary breakdown and destruction of ASO, as worst, or the like. SOLUTION: Through holes and contacts of different shapes are respectively disposed on diffusions of a plurality of transistors. In other words, through holes and contacts of mutually different width and length are respectively disposed, so that resistance values associated with respective diffusion are equalized. With this, current is equalized, and VBE of respective diffusion is caused to be the same, thus the destruction of the ASO due to current concentration is prevented.