METHOD FOR FORMING, INSULATION FILM, METHOD FOR MANUFACTURING LIQUID CRYSTAL PANEL, AND APPARATUS FOR FORMING THE INSULATION FILM

PROBLEM TO BE SOLVED: To provide a method for forming an insulation film on the surface of a film containing silicon(Si), such as amorphous silicon at low temperature so that a growth speed becomes faster than before, and to provide a manufacturing method of a liquid crystal panel and an insulation...

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Bibliographische Detailangaben
Hauptverfasser:	OHIRA KOICHI, SHIOTANI YOSHIMI, MAEDA KAZUO, MATSUI FUMIYA
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming an insulation film on the surface of a film containing silicon(Si), such as amorphous silicon at low temperature so that a growth speed becomes faster than before, and to provide a manufacturing method of a liquid crystal panel and an insulation film forming apparatus. SOLUTION: In the formation method of an insulation film, a mixed gas containing krypton(Kr), ozone(O3 ), and an oxidizing gas is activated by microwaves, and the surface of an amorphous silicon film 19 (a silicon(Si)- containing film) is exposed to the activated mixed gas, thus forming an insulation film 19a on the surface of the amorphous silicon film 19.