MEMBER FOR PRODUCING SEMICONDUCTOR
PROBLEM TO BE SOLVED: To solve the problem caused by the difference between the thermal expansion of a C/C composite material and that of a SiC coated layer and to provide a member useful for easily producing even large-sized semiconductor materials. SOLUTION: In the member for producing semiconduct...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To solve the problem caused by the difference between the thermal expansion of a C/C composite material and that of a SiC coated layer and to provide a member useful for easily producing even large-sized semiconductor materials. SOLUTION: In the member for producing semiconductor materials which is obtained by forming a SiC coating layer on a carbon fiber-reinforced carbon composite base material, the composite base material is subjected to CVI treatment for filling carbon, and a carbon coating layer formed by CVD treatment is interposed between the surface of composite base material and the SiC coating layer as an intermediate layer. The thermal stress is eliminated by the specific internal structure. Hence the member for producing semiconductors produced by the method mentioned above has excellent resistance to thermal shock, high mechanical strengths and chemical stability, and is suitable as a hot zone member and has high quality and exhibits dramatically prolonged service life in comparison with a conventional member. |
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