INDIUM OXIDE POWDER AND METHOD FOR MANUFACTURING ITO SPUTTERING TARGET

PROBLEM TO BE SOLVED: To provide an indium oxide powder, capable of suppressing the occurrence of crack after cast molding and suppressing the occurrence of nodule, and to provide a method for manufacturing an ITO sputtering target. SOLUTION: The indium oxide powder satisfies at least one of propert...

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Hauptverfasser: NAGASAKI YUICHI, TERAOKA HIDEKI, KUROSAWA SATOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an indium oxide powder, capable of suppressing the occurrence of crack after cast molding and suppressing the occurrence of nodule, and to provide a method for manufacturing an ITO sputtering target. SOLUTION: The indium oxide powder satisfies at least one of properties (1)-(3): (1) Initial bulk density is 0.3-1.0 g/cm . (2) Tap bulk density is 0.7-1.5 g/cm . (3) Compression degree expressed by (tap bulk density-initial bulk density)×100/(tap bulk density) is 14-80. The ITO sputtering target consisting of an ITO sintered compact is manufactured by mixing the indium oxide powder with tin oxide powder, cast molding and firing them.