NITRIDE SEMICONDUCTOR LASER

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser whose cleaved end face is flat and which can prevent the breakage of laser end face occurring during operation, so as to lengthen its service life as a result. SOLUTION: This nitride semiconductor laser is provided with a stress concentr...

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Bibliographische Detailangaben
Hauptverfasser: TOMITANI SHIGETAKA, HINO TOMOKIMI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser whose cleaved end face is flat and which can prevent the breakage of laser end face occurring during operation, so as to lengthen its service life as a result. SOLUTION: This nitride semiconductor laser is provided with a stress concentration suppressing layer between an active layer and a cap layer.