VARIABLE AREA ELECTRON BEAM LITHOGRAPHY SYSTEM

PROBLEM TO BE SOLVED: To realize a variable area electron beam lithography system capable of freely forming triangular and rectangular electron beams with high throughput. SOLUTION: A second slit 40 has a rectangular opening 41 in the maximum beam size formed in proximity to the center thereof. Openings 42a to 42d in right angled triangle having a hypotenuse at 40 deg. are placed around the rectangular opening 41. The longer side of each of the four right angled triangular openings faces a corresponding apex of the rectangular opening 41. One opening 42a of the four triangular openings is so positioned that the distance between the corresponding apex of the rectangular opening 41 and the middle point on the hypotenuse thereof is approx. 1.4 (=√2W) times the maximum beams size W. The three remaining triangular openings 42b, 42c, and 42d are so positioned that the distance between a corresponding apex of the rectangular opening 41 and the middle point on the hypotenuse of each of the triangular openings is approx. 0.7 (=√2W/2) times the maximum beam size W.