POLISHING METHOD USING CERIA SLURRY, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a polishing method which can realize both superior flatness and mass productivity using high selectivity ceria slurry. SOLUTION: A polishing step is divided into a plurality of stages of initial polishing, planarization process and post planarization, wherein polishing is carried out under polishing conditions different in the stages. Since polishing is carried out under suitable polishing conditions different at each stage, a polishing rate for each stage can be increased to shorten the polishing time. Since polishing is carried out using a high selectivity ceria slurry, having an superior planarizing characteristic, both high planarity and high mass productivity can be realized.