SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device that has capacitance comprising a gate electrode whose resistance can be made low and an upper electrode and a lower electrode that are made of the same material. SOLUTION: The semiconductor device, which comprises an element isolation film 22 and a gate insulating film 23 that are formed on a semiconductor substrate 21, the gate electrode 24B formed on the gate insulating film 23, source drain regions 27, 28, 30, 31 formed so as to be adjacent to the gate electrode 24B, and the capacitance comprising the upper electrode 26, the lower electrode 24, and a capacitance insulating film 25 that are formed above the element isolation film 22, is characterized in that a titanium silicide film 32 is formed on each surface of the gate electrode 24B, the lower electrode 24, and the upper electrode 26.