SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent an electrical short circuit between an external base electrode and an emitter, and its manufacturing method. SOLUTION: The outer base electrode 5b is electrically connected to a base 5a. An insulation film 6 is formed on the b...

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Bibliographische Detailangaben
Hauptverfasser:	IMADA KATSUHIRO, HAYASHI MASAMI, FURUKAWA TAISUKE, IKEDA TATSUHIKO, YONEDA KIWA, KAWAMA YOSHITATSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent an electrical short circuit between an external base electrode and an emitter, and its manufacturing method. SOLUTION: The outer base electrode 5b is electrically connected to a base 5a. An insulation film 6 is formed on the base 5a and the outer base electrode 5b, and a hole 6a partly reaching the surface of the base 5a is formed in the insulation film 6. An emitter electrode 7 is formed on the insulation film 6 so as to contact with the base 5a through the hole 6a. High melting point metal silicide films 8a, 8b are separately formed on the surface of the outer base electrode 5b exposing from the insulation film 6 and on the surface of the emitter electrode 7. The edge 6b of the insulation film 6 is protruded longer than the edge 7a of the emitter electrode 7.