GAS INTRODUCING EQUIPMENT, AND EQUIPMENT AND METHOD FOR FILM FORMATION

PROBLEM TO BE SOLVED: To provide a gas introducing equipment and an equipment and a method for film formation which can suppress a decrease in film forming speed and prevent film thickness from being uneven when a thin film is formed on a base body by a CVD method. SOLUTION: A CVD device 1 has a sho...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NISHISATO HIROSHI, MAEDA YUJI, NAKANISHI TAKAYUKI, TOKAI NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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