GAS INTRODUCING EQUIPMENT, AND EQUIPMENT AND METHOD FOR FILM FORMATION

PROBLEM TO BE SOLVED: To provide a gas introducing equipment and an equipment and a method for film formation which can suppress a decrease in film forming speed and prevent film thickness from being uneven when a thin film is formed on a base body by a CVD method. SOLUTION: A CVD device 1 has a sho...

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Hauptverfasser:	NISHISATO HIROSHI, MAEDA YUJI, NAKANISHI TAKAYUKI, TOKAI NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a gas introducing equipment and an equipment and a method for film formation which can suppress a decrease in film forming speed and prevent film thickness from being uneven when a thin film is formed on a base body by a CVD method. SOLUTION: A CVD device 1 has a shower head 4 and a susceptor 5 installed opposite in a chamber 2, and raw material gas is supplied from a gas supply part 30 c connected to a gas supply hole 9 of the chamber 2 into the cavity Sc of the shower head 4. The raw material gas is sufficiently reduced in speed, mixed, and diffused in the cavity Sc. Further, the raw material gas in the cavity Sc is heated through a face plate 45 of the shower head 4. At this time, the internal height G of the cavity Sc is set larger than a distance D, the d diffusion of heat from the shower head 4 is limited, and the thermal insulation of the cavity Sc is increased to sufficiently heat the raw material gas.