DEVICE AND METHOD FOR PLASMA PROCESSING

PROBLEM TO BE SOLVED: To provide a device and a method for plasma processing which control the state of variance in etching speed in a wafer surface so that it does not vary from the initial state so much and can perform etching processing with good reproducibility. SOLUTION: The plasma processor ge...

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Bibliographische Detailangaben
1. Verfasser:	ISAKA HISAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a device and a method for plasma processing which control the state of variance in etching speed in a wafer surface so that it does not vary from the initial state so much and can perform etching processing with good reproducibility. SOLUTION: The plasma processor generates the plasma by introducing high-frequency electric power for plasma generation into a magnetic field by a high-frequency power source 1 for plasma generation, and applies high-frequency electric power for bias generation to a wafer 8 as a substrate by a high-frequency power source 10 for bias generation to perform the plasma processing. Evaluation sample data obtained by processing a sample substrate with plasma in advance are held in a storage device 13; and an arithmetic unit 14 performs arithmetic processing according to the evaluation sample data and a controller 16 controls parameters.