METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve reliability of semiconductor devices by reducing the charge-up damage to substrates, in a manufacturing process using plasma. SOLUTION: An insulation film 22 is formed on the reverse side of the substrate 11, prior to a process for forming a first wiring layer. In th...

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Bibliographische Detailangaben
Hauptverfasser:	SAITO TETSUO, MAENO RYOHEI, SAIKAWA KENJI, TAMARU TAKESHI, OKUDAIRA SADAYUKI, OMORI KAZUTOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To improve reliability of semiconductor devices by reducing the charge-up damage to substrates, in a manufacturing process using plasma. SOLUTION: An insulation film 22 is formed on the reverse side of the substrate 11, prior to a process for forming a first wiring layer. In this way, charges generated on the substrate 11 are prevented from flowing to the ground potential through the substrate 11, even when a plasma CVD method, a sputter method or a dry etching method is used in the wiring forming process afterward, and damages to the substrate 11 due to the charge-up are prevented.