METHOD FOR ADJUSTING CHARACTERISTIC OF ETCHING BY SWITCHING GASES DURING ETCHING

METHOD FOR ADJUSTING CHARACTERISTIC OF ETCHING BY SWITCHING GASES DURING ETCHING

PROBLEM TO BE SOLVED: To provide a method for adjusting the characteristics of etching by switching the processing gases during the etching process. SOLUTION: An etching process comprises a first step and a second step at least repeated once. For example, in the first step the etching speed of an ox...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CELII FRANCIS G, JIAN PING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for adjusting the characteristics of etching by switching the processing gases during the etching process. SOLUTION: An etching process comprises a first step and a second step at least repeated once. For example, in the first step the etching speed of an oxide 108 is increased, and in the second step, the etching speed of the oxide is reduced and the etching speed of other material 114 is increased.