METHOD FOR MANUFACTURING SEMICONDUCTOR ULTRAFINE PARTICLE

PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor fine particles industrially advantageously which has high luminous efficiency and a narrow grain distribution. SOLUTION: In the method for manufacturing semiconductor ultrafine particles, a semiconductor crystal is grown in a...

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1. Verfasser:	SAIDA SOICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor fine particles industrially advantageously which has high luminous efficiency and a narrow grain distribution. SOLUTION: In the method for manufacturing semiconductor ultrafine particles, a semiconductor crystal is grown in a liquid phase in the presence of an orientational organic phosphide. As the orientational organic phosphide, a heating process is performed in advance, thereby reproducing hypophosphorous acids.