PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light for exposure having a wavelength of 1 nm band to 30 nm band or of 110 nm band to 180 nm band. SOLUTION: A pattern forming material having a polymer containing a first unit of formula 1 and a second unit...

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Bibliographische Detailangaben
Hauptverfasser:	ENDO MASATAKA, SASAKO MASARU, SHIRAI MASAMITSU, KADOOKA MASAHIRO, KISHIMURA SHINYA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light for exposure having a wavelength of 1 nm band to 30 nm band or of 110 nm band to 180 nm band. SOLUTION: A pattern forming material having a polymer containing a first unit of formula 1 and a second unit of formula 2 and an acid generator is applied on a substrate to form a resist film. In the formulae, R1 and R3 are the same or different and each alkyl or Cl- or F-containing alkyl; R2 is a protective group which is released by an acid; and (m) is an integer of 0-5. The resist film is patternwise exposed by irradiation with light for exposure having a wavelength of 1 nm band to 30 nm band or of 110 nm band to 180 nm band and the patternwise exposed resist film is developed to form the objective resist pattern.