SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a longitudinal type semiconductor substrate processing device, which can form a film of good quality in a contamination-free highly clean reaction atmosphere. SOLUTION: The semiconductor processing device 20 closes a lower furnace opening 16 with a sealing cap 17, an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SANBE MAKOTO, MORIYA ATSUSHI, KOGANO MINORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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