SEMICONDUCTOR SUBSTRATE PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a longitudinal type semiconductor substrate processing device, which can form a film of good quality in a contamination-free highly clean reaction atmosphere. SOLUTION: The semiconductor processing device 20 closes a lower furnace opening 16 with a sealing cap 17, an...

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Bibliographische Detailangaben
Hauptverfasser:	SANBE MAKOTO, MORIYA ATSUSHI, KOGANO MINORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a longitudinal type semiconductor substrate processing device, which can form a film of good quality in a contamination-free highly clean reaction atmosphere. SOLUTION: The semiconductor processing device 20 closes a lower furnace opening 16 with a sealing cap 17, and introduces reaction gas from the furnace opening 16 to process a wafer 5 placed on a boat 6 placed in a substrate processing space 20 in the furnace. In the furnace opening 16; a base 28 is provided which projects radially inward from a furnace opening flange 7 and above the base 28 in the furnace opening 16; a shield plate 8 which is supported by the base 28, at least when the boat 6 is moved up and down is arranged as a shield plate 8 which overlaps partially with the base in the vertical direction; the shield plate 8 and base 28 prevents a contaminant on the side of the furnace opening 16 from being diffused in reverse direction from the furnace opening part space 21 to the substrate processing space 20.