APPARATUS AND METHOD FOR FORMING FILM ON LARGE-SCALE SUBSTRATE

PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a film on a large- scale substrate with plasma CVD, which can accurately form a film having a uniform thickness and quality, by detecting factors directly correlating with distribution of plasma as a distribution on or around a p...

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Bibliographische Detailangaben
Hauptverfasser: NISHIDA SEIICHI, KUBOTA TAKAHIRO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide an apparatus and a method for forming a film on a large- scale substrate with plasma CVD, which can accurately form a film having a uniform thickness and quality, by detecting factors directly correlating with distribution of plasma as a distribution on or around a plane of a substrate, and controlling the distribution of plasma into the optimum condition, on the basis of the information on the distribution. SOLUTION: This apparatus comprises a sealed housing which introduces high-frequency current fractionated by a high-frequency current fractionation means, through a high-frequency current fractionation point set on at least one of electrodes or the current feeding point, and converts high-frequency current into light by a photovoltaic device, an optical fiber cable which takes out optical signals from the sealed housing and leads them to an optical signal processing device, and the optical signal processing device which outputs plasma distribution signals of generated plasma according to the optical signals, to make the plasma distribution signals as the information for uniformizing the distribution of generated plasma.