FILM FORMING METHOD AND CVD APPARATUS FOR PERFORMING THE METHOD

PROBLEM TO BE SOLVED: To provide a method for forming a film under a normal pressure environment with a CVD method with the use of vacuum-ultraviolet light, and a CVD apparatus for performing the method. SOLUTION: The method for forming the film on a substrate arranged in a reaction chamber, with th...

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Hauptverfasser:	MOTOKAWA YOSUKE, MOTOYAMA RIICHI, MIYANO JUNICHI, MUTO HIROYUKI, SAIKAWA KIYOHIKO, KUROSAWA HIROSHI, YOKOYA ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for forming a film under a normal pressure environment with a CVD method with the use of vacuum-ultraviolet light, and a CVD apparatus for performing the method. SOLUTION: The method for forming the film on a substrate arranged in a reaction chamber, with the use of the CVD apparatus having the above reaction chamber, comprises supplying organic gases as raw materials for forming the film and dilute gases consisting of nitrogen gas or inert gas, into the above reaction chamber; and irradiating the above substrate with vacuum-ultraviolet light. Then, the film is formed on the above substrate under a normal pressure environment.